IRLD110PBF VISHAY
Артикул
IRLD110PBF
Бренд
VISHAY
Описание
MOSFET N-CH 100V 1A 4DIP, N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Цена
310 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLD110PBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Mounting Type
Through Hole
Standard Package
100
Other Names
*IRLD110PBF
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
4-HVMDIP
Base Product Number
IRLD110
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
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