IRLI640G VISHAY
Артикул
IRLI640G
Бренд
VISHAY
Описание
MOSFET N-CH 200V 9.9A TO220-3, N-Channel 200 V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLI640G.jpg
Standard Package
1,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Other Names
*IRLI640G
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
TO-220-3
Base Product Number
IRLI640
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
40W (Tc)
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