SI1050X-T1-GE3 VISHAY
Артикул
SI1050X-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 8V 1.34A SC89-6, N-Channel 8 V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Цена
91 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1050X-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.6 nC @ 5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
585 pF @ 4 V
FET Feature
-
Standard Package
3,000
Other Names
SI1050X-T1-GE3DKR,SI1050X-T1-GE3CT,SI1050XT1GE3,SI1050X-T1-GE3TR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89 (SOT-563F)
Base Product Number
SI1050
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Power Dissipation (Max)
236mW (Ta)
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