SI1062X-T1-GE3 VISHAY
Артикул
SI1062X-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 20V SC89-3, N-Channel 20 V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1062X-T1-GE3.jpg
Standard Package
3,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 10 V
FET Feature
-
Other Names
SI1062XT1GE3,SI1062X-T1-GE3TR,SI1062X-T1-GE3CT,SI1062X-T1-GE3DKR
HTSUS
8541.21.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Supplier Device Package
SC-89-3
Base Product Number
SI1062
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
220mW (Ta)
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