SI1414DH-T1-GE3 VISHAY
Артикул
SI1414DH-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 4A SOT-363, N-Channel 30 V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6
Цена
62 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1414DH-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
46mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Tc)
Standard Package
3,000
Other Names
SI1414DH-T1-GE3DKR,SI1414DH-T1-GE3CT,SI1414DH-T1-GE3TR,SI1414DH-T1-GE3-ND
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
Base Product Number
SI1414
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
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