SI1499DH-T1-GE3 VISHAY
Артикул
SI1499DH-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 8V 1.6A SC70-6, P-Channel 8 V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
Цена
121 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1499DH-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
78mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 2.78W (Tc)
Standard Package
3,000
Other Names
SI1499DH-T1-GE3DKR,SI1499DH-T1-GE3CT,SI1499DH-T1-GE3TR,SI1499DHT1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
Base Product Number
SI1499
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
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