SI2304DDS-T1-GE3 VISHAY
Артикул
SI2304DDS-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 3.3A/3.6A SOT23, N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Цена
78 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2304DDS-T1-GE3.jpg
Standard Package
3,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 15 V
FET Feature
-
Other Names
SI2304DDST1GE3,SI2304DDS-T1-GE3DKR,SI2304DDS-T1-GE3TR,SI2304DDS-T1-GE3-ND,SI2304DDS-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2304
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
1.1W (Ta), 1.7W (Tc)
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