SI2316DS-T1-E3 VISHAY
Артикул
SI2316DS-T1-E3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 2.9A SOT23-3, N-Channel 30 V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Цена
134 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2316DS-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA (Min)
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
215 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Standard Package
3,000
Other Names
SI2316DST1E3,SI2316DS-T1-E3DKR,SI2316DS-T1-E3TR,SI2316DS-T1-E3CT
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2316
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут