SI2319DS-T1-GE3 VISHAY
Артикул
SI2319DS-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 40V 2.3A SOT23-3, P-Channel 40 V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Цена
134 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2319DS-T1-GE3.jpg
Standard Package
3,000
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 20 V
FET Feature
-
Other Names
SI2319DS-T1-GE3CT,SI2319DS-T1-GE3TR,SI2319DS-T1-GE3DKR,SI2319DS-T1-GE3-ND
HTSUS
8541.21.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2319
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
750mW (Ta)
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