SI2327DS-T1-E3 VISHAY
Артикул
SI2327DS-T1-E3
Бренд
VISHAY
Описание
MOSFET P-CH 200V 380MA SOT23-3, P-Channel 200 V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2327DS-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Standard Package
3,000
Other Names
SI2327DST1E3,SI2327DS-T1-E3CT,SI2327DS-T1-E3TR,SI2327DS-T1-E3DKR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2327
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
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