SI2337DS-T1-GE3 VISHAY
Артикул
SI2337DS-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 80V 2.2A SOT23-3, P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Цена
181 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2337DS-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
760mW (Ta), 2.5W (Tc)
Standard Package
3,000
Other Names
SI2337DS-T1-GE3TR,SI2337DS-T1-GE3DKR,SI2337DS-T1-GE3-ND,SI2337DST1GE3,SI2337DS-T1-GE3CT
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-50°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2337
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
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