SI2343CDS-T1-GE3 VISHAY
Артикул
SI2343CDS-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 5.9A SOT23-3, P-Channel 30 V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Цена
112 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2343CDS-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 15 V
FET Feature
-
Standard Package
3,000
Other Names
SI2343CDS-T1-GE3CT,SI2343CDS-T1-GE3DKR,SI2343CDS-T1-GE3TR,SI2343CDST1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SI2343
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
1.25W (Ta), 2.5W (Tc)
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