SI2393DS-T1-GE3 VISHAY
Артикул
SI2393DS-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 6.1A/7.5A SOT23, P-Channel 30 V 6.1A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Цена
91 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI2393DS-T1-GE3.jpg
Supplier Device Package
SOT-23-3 (TO-236)
REACH Status
REACH Unaffected
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs
22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
+16V, -20V
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
SI2393
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SI2393DS-T1-GE3CT,742-SI2393DS-T1-GE3TR,742-SI2393DS-T1-GE3DKR
Standard Package
3,000
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)
1.3W (Ta), 2.5W (Tc)
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