SI3127DV-T1-GE3 VISHAY
Артикул
SI3127DV-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 60V 3.5A/13A 6TSOP, P-Channel 60 V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Цена
86 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3127DV-T1-GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
833 pF @ 20 V
FET Feature
-
Standard Package
3,000
Other Names
SI3127DV-T1-GE3TR,SI3127DV-T1-GE3DKR,SI3127DV-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3127
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
2W (Ta), 4.2W (Tc)
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