SI3421DV-T1-GE3 VISHAY
Артикул
SI3421DV-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 8A 6TSOP, P-Channel 30 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Цена
93 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3421DV-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2580 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 4.2W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI3421DV-T1-GE3DKR,SI3421DV-T1-GE3TR,SI3421DV-T1-GE3CT
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3421
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
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