SI3424BDV-T1-E3 VISHAY
Артикул
SI3424BDV-T1-E3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 8A 6TSOP, N-Channel 30 V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3424BDV-T1-E3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
735 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 2.98W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3424
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
19.6 nC @ 10 V
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