SI3429EDV-T1-GE3 VISHAY
Артикул
SI3429EDV-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 8A/8A 6TSOP, P-Channel 20 V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
Цена
84 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3429EDV-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
4085 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
4.2W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI3429EDV-T1-GE3TR,SI3429EDV-T1-GE3CT,SI3429EDV-T1-GE3DKR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3429
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
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