SI3433CDV-T1-GE3 VISHAY
Артикул
SI3433CDV-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 6A 6TSOP, P-Channel 20 V 6A (Tc) 1.6W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Цена
91 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3433CDV-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
38mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta), 3.3W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI3433CDV-T1-GE3-ND,SI3433CDVT1GE3,SI3433CDV-T1-GE3DKR,SI3433CDV-T1-GE3CT,SI3433CDV-T1-GE3TR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3433
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 8 V
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