SI3456BDV-T1-E3 VISHAY
Артикул
SI3456BDV-T1-E3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 4.5A 6TSOP, N-Channel 30 V 4.5A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3456BDV-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Standard Package
3,000
Other Names
SI3456BDV-T1-E3DKR,SI3456BDVT1E3,SI3456BDV-T1-E3CT,SI3456BDV-T1-E3TR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3456
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
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