SI3459DV-T1-E3 VISHAY
Артикул
SI3459DV-T1-E3
Бренд
VISHAY
Описание
MOSFET P-CH 60V 2.2A 6TSOP, P-Channel 60 V 2.2A (Tc) 2W (Ta) Surface Mount 6-TSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3459DV-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
220mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Standard Package
3,000
Other Names
SI3459DV-T1-E3CT,SI3459DVT1E3,SI3459DV-T1-E3TR,SI3459DV-T1-E3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3459
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
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