SI3585CDV-T1-GE3 VISHAY
Артикул
SI3585CDV-T1-GE3
Бренд
VISHAY
Описание
MOSFET N/P-CH 20V 3.9A 6TSOP, Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Цена
100 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI3585CDV-T1-GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
1.4W, 1.3W
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.9A, 2.1A
Rds On (Max) @ Id, Vgs
58mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 10V
FET Feature
Logic Level Gate
Other Names
SI3585CDV-T1-GE3-ND,SI3585CDV-T1-GE3TR,SI3585CDV-T1-GE3CT,SI3585CDV-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3585
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 10V
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