SI4204DY-T1-GE3 VISHAY
Артикул
SI4204DY-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 20V 19.8A 8-SOIC, Mosfet Array 2 N-Channel (Dual) 20V 19.8A 3.25W Surface Mount 8-SOIC
Цена
341 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI4204DY-T1-GE3.jpg
Standard Package
2,500
Mounting Type
Surface Mount
Power - Max
3.25W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
19.8A
Rds On (Max) @ Id, Vgs
4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2110pF @ 10V
FET Feature
Standard
Other Names
SI4204DYT1GE3,SI4204DY-T1-GE3TR,SI4204DY-T1-GE3CT,SI4204DY-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4204
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
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