SI4451DY-T1-GE3 VISHAY
Артикул
SI4451DY-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 12V 10A 8SO, P-Channel 12 V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4451DY-T1-GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
8.25mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Standard Package
2,500
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4451
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power Dissipation (Max)
1.5W (Ta)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут