SI4686DY-T1-E3 VISHAY
Артикул
SI4686DY-T1-E3
Бренд
VISHAY
Описание
MOSFET N-CH 30V 18.2A 8SO, N-Channel 30 V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC
Цена
229 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4686DY-T1-E3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
18.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1220 pF @ 15 V
FET Feature
-
Standard Package
2,500
Other Names
SI4686DY-T1-E3TR,SI4686DYT1E3,SI4686DY-T1-E3CT,SI4686DY-T1-E3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4686
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
3W (Ta), 5.2W (Tc)
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