SI4838BDY-T1-GE3 VISHAY
Артикул
SI4838BDY-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 12V 34A 8SO, N-Channel 12 V 34A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
Цена
295 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4838BDY-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
5760 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)
Mounting Type
Surface Mount
Standard Package
2,500
Other Names
SI4838BDY-T1-GE3TR,SI4838BDY-T1-GE3DKR,SI4838BDY-T1-GE3CT,SI4838BDYT1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4838
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 4.5 V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут