SI4914BDY-T1-GE3 VISHAY
Артикул
SI4914BDY-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 30V 8.4A 8-SOIC, Mosfet Array 2 N-Channel (Half Bridge) 30V 8.4A, 8A 2.7W, 3.1W Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI4914BDY-T1-GE3.jpg
Standard Package
2,500
Mounting Type
Surface Mount
Power - Max
2.7W, 3.1W
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.4A, 8A
Rds On (Max) @ Id, Vgs
21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
Standard
Other Names
SI4914BDY-T1-GE3CT,SI4914BDY-T1-GE3DKR,SI4914BDYT1GE3,SI4914BDY-T1-GE3TR
HTSUS
8541.29.0095
Series
LITTLE FOOT®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4914
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 4.5V
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