SI4920DY-T1-GE3 VISHAY
Артикул
SI4920DY-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 30V 8-SOIC, Mosfet Array 2 N-Channel (Dual) 30V - 2W Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI4920DY-T1-GE3.jpg
Standard Package
2,500
Mounting Type
Surface Mount
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
25mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
Logic Level Gate
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4920
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Gate Charge (Qg) (Max) @ Vgs
23nC @ 5V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут