SI4946BEY-T1-GE3 VISHAY
Артикул
SI4946BEY-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 60V 6.5A 8-SOIC, Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SOIC
Цена
243 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI4946BEY-T1-GE3.jpg
Standard Package
2,500
Mounting Type
Surface Mount
Power - Max
3.7W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
6.5A
Rds On (Max) @ Id, Vgs
41mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
840pF @ 30V
FET Feature
Logic Level Gate
Other Names
SI4946BEY-T1-GE3DKR,SI4946BEY-T1-GE3TR,SI4946BEY-T1-GE3CT,SI4946BEYT1GE3
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4946
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
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