SI5515CDC-T1-GE3 VISHAY
Артикул
SI5515CDC-T1-GE3
Бренд
VISHAY
Описание
MOSFET N/P-CH 20V 4A 1206-8, Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Цена
150 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI5515CDC-T1-GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
3.1W
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
632pF @ 10V
FET Feature
Logic Level Gate
Other Names
SI5515CDCT1GE3,SI5515CDC-T1-GE3DKR,SI5515CDC-T1-GE3TR,SI5515CDC-T1-GE3CT
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Base Product Number
SI5515
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 5V
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