SI6562CDQ-T1-GE3 VISHAY
Артикул
SI6562CDQ-T1-GE3
Бренд
VISHAY
Описание
MOSFET N/P-CH 20V 6.7A 8-TSSOP, Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
Цена
184 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI6562CDQ-T1-GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
1.6W, 1.7W
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6.7A, 6.1A
Rds On (Max) @ Id, Vgs
22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 10V
FET Feature
Logic Level Gate
Other Names
SI6562CDQT1GE3,SI6562CDQ-T1-GE3DKR,SI6562CDQ-T1-GE3CT,SI6562CDQ-T1-GE3TR
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
Base Product Number
SI6562
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
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