SI6913DQ-T1-GE3 VISHAY
Артикул
SI6913DQ-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2P-CH 12V 4.9A 8-TSSOP, Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP
Цена
243 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI6913DQ-T1-GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
830mW
FET Type
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
4.9A
Rds On (Max) @ Id, Vgs
21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Other Names
SI6913DQ-T1-GE3TR,SI6913DQ-T1-GE3DKR,SI6913DQ-T1-GE3CT,SI6913DQT1GE3
HTSUS
8541.21.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
Base Product Number
SI6913
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
FET Feature
Logic Level Gate
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