SI7119DN-T1-GE3 VISHAY
Артикул
SI7119DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 200V 3.8A PPAK1212-8, P-Channel 200 V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Цена
181 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7119DN-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
666 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI7119DN-T1-GE3CT,SI7119DN-T1-GE3DKR,SI7119DN-T1-GE3TR,SI7119DNT1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-50°C ~ 150°C (TJ)
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Base Product Number
SI7119
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
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