SI7190DP-T1-GE3 VISHAY
Артикул
SI7190DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 250V 18.4A PPAK SO-8, N-Channel 250 V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8
Цена
369 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7190DP-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
118mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2214 pF @ 125 V
FET Feature
-
Power Dissipation (Max)
5.4W (Ta), 96W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI7190DP-T1-GE3TR,SI7190DP-T1-GE3DKR,SI7190DPT1GE3,SI7190DP-T1-GE3CT
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SI7190
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
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