SI7456DP-T1-E3 VISHAY
Артикул
SI7456DP-T1-E3
Бренд
VISHAY
Описание
MOSFET N-CH 100V 5.7A PPAK SO-8, N-Channel 100 V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Цена
344 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7456DP-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta)
Standard Package
3,000
Other Names
SI7456DP-T1-E3CT,SI7456DP-T1-E3DKR,SI7456DP-T1-E3TR,SI7456DPT1E3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SI7456
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
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