SI7629DN-T1-GE3 VISHAY
Артикул
SI7629DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 35A PPAK1212-8, P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Цена
200 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7629DN-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
5790 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI7629DN-T1-GE3TR,SI7629DN-T1-GE3CT,SI7629DN-T1-GE3DKR,SI7629DNT1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Base Product Number
SI7629
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
177 nC @ 10 V
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