SI7850DP-T1-GE3 VISHAY
Артикул
SI7850DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 60V 6.2A PPAK SO-8, N-Channel 60 V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Цена
327 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7850DP-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Standard Package
3,000
Other Names
SI7850DP-T1-GE3TR,SI7850DP-T1-GE3DKR,SI7850DPT1GE3,SI7850DP-T1-GE3CT
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SI7850
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
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