SI7998DP-T1-GE3 VISHAY
Артикул
SI7998DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 30V 25A PPAK SO-8, Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual
Цена
288 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SI7998DP-T1-GE3.jpg
Standard Package
3,000
Mounting Type
Surface Mount
Power - Max
22W, 40W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
25A, 30A
Rds On (Max) @ Id, Vgs
9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 15V
FET Feature
Logic Level Gate
Other Names
SI7998DP-T1-GE3DKR,SI7998DPT1GE3,SI7998DP-T1-GE3TR,SI7998DP-T1-GE3-ND,SI7998DP-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Base Product Number
SI7998
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
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