SI8461DB-T2-E1 VISHAY
Артикул
SI8461DB-T2-E1
Бренд
VISHAY
Описание
MOSFET P-CH 20V 4MICROFOOT, P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI8461DB-T2-E1.jpg
Standard Package
3,000
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 10 V
FET Feature
-
Other Names
SI8461DB-T2-E1TR,SI8461DB-T2-E1CT,SI8461DB-T2-E1DKR,SI8461DBT2E1
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-XFBGA, CSPBGA
Supplier Device Package
4-Microfoot
Base Product Number
SI8461
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
780mW (Ta), 1.8W (Tc)
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