SI9435BDY-T1-E3 VISHAY
Артикул
SI9435BDY-T1-E3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 4.1A 8SO, P-Channel 30 V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Цена
167 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI9435BDY-T1-E3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
42mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Standard Package
2,500
Other Names
SI9435BDY-T1-E3DKR,SI9435BDYT1E3,Q6936817FI,SI9435BDY-T1-E3CT,SI9435BDY-T1-E3TR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI9435
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
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