SIA411DJ-T1-GE3 VISHAY
Артикул
SIA411DJ-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 12A PPAK SC70-6, P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIA411DJ-T1-GE3.jpg
Standard Package
3,000
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 10 V
FET Feature
-
Other Names
SIA411DJ-T1-GE3TR,SIA411DJT1GE3,SIA411DJ-T1-GE3DKR,SIA411DJ-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Supplier Device Package
PowerPAK® SC-70-6
Base Product Number
SIA411
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
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