SIDR626DP-T1-GE3 VISHAY
Артикул
SIDR626DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 60V 42.8A/100A PPAK, N-Channel 60 V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Цена
513 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIDR626DP-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5130 pF @ 30 V
FET Feature
-
Standard Package
3,000
Other Names
SIDR626DP-T1-GE3TR,SIDR626DP-T1-GE3DKR,SIDR626DP-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8DC
Base Product Number
SIDR626
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
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