SIDR680DP-T1-GE3 VISHAY
Артикул
SIDR680DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 80V 32.8A/100A PPAK, N-Channel 80 V 32.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Цена
520 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIDR680DP-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
32.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5150 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SIDR680DP-T1-GE3CT,SIDR680DP-T1-GE3TR,SIDR680DP-T1-GE3DKR
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8DC
Base Product Number
SIDR680
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
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