SIHB15N80AE-GE3 VISHAY
Артикул
SIHB15N80AE-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 800V 13A D2PAK, N-Channel 800 V 13A (Tc) 156W (Tc) Surface Mount D?PAK (TO-263)
Цена
493 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
E
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Rds On (Max) @ Id, Vgs
350mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Drain to Source Voltage (Vdss)
800 V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1093 pF @ 100 V
Supplier Device Package
D?PAK (TO-263)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
SIHB15
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIHB15N80AE-GE3
Standard Package
50
Drive Voltage (Max Rds On, Min Rds On)
10V
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