SIHD12N50E-GE3 VISHAY
Артикул
SIHD12N50E-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 550V 10.5A DPAK, N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount D-Pak
Цена
324 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIHD12N50E-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
886 pF @ 100 V
FET Feature
-
Standard Package
3,000
Other Names
SIHD12N50E-GE3CT,SIHD12N50E-GE3TRINACTIVE,SIHD12N50E-GE3DKR-ND,SIHD12N50E-GE3DKRINACTIVE,SIHD12N50E-GE3DKR,SIHD12N50E-GE3TR-ND,SIHD12N50E-GE3CT-ND,SIHD12N50E-GE3TR
HTSUS
8541.29.0095
Series
E
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Base Product Number
SIHD12
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
114W (Tc)
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