SIHH068N60E-T1-GE3 VISHAY
Артикул
SIHH068N60E-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 600V 34A PPAK 8 X 8, N-Channel 600 V 34A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
Цена
1 469 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIHH068N60E-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
68mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2650 pF @ 100 V
FET Feature
-
Standard Package
3,000
Other Names
SIHH068N60E-T1-GE3TR,SIHH068N60E-T1-GE3DKR,SIHH068N60E-T1-GE3CT
HTSUS
8541.29.0095
Series
E
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PowerPAK® 8 x 8
Base Product Number
SIHH068
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
202W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут