SIHP14N50D-GE3 VISHAY
Артикул
SIHP14N50D-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 500V 14A TO220AB, N-Channel 500 V 14A (Tc) 208W (Tc) Through Hole TO-220AB
Цена
270 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIHP14N50D-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1144 pF @ 100 V
FET Feature
-
Standard Package
1,000
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Base Product Number
SIHP14
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
208W (Tc)
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