SIHP8N50D-E3 VISHAY
Артикул
SIHP8N50D-E3
Бренд
VISHAY
Описание
MOSFET N-CH 500V 8.7A TO220AB, N-Channel 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB
Цена
142 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIHP8N50D-E3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
527 pF @ 100 V
FET Feature
-
Standard Package
1,000
Other Names
SIHP8N50D-E3CT-ND,SIHP8N50D-E3TR-ND,SIHP8N50D-E3TRINACTIVE,SIHP8N50D-E3CT,SIHP8N50DE3,SIHP8N50D-E3TR
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Base Product Number
SIHP8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
156W (Tc)
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