SIR104DP-T1-RE3 VISHAY
Артикул
SIR104DP-T1-RE3
Бренд
VISHAY
Описание
MOSFET N-CH 100V 18.3A/79A PPAK, N-Channel 100 V 18.3A (Ta), 79A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
Цена
450 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR104DP-T1-RE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4230 pF @ 50 V
FET Feature
-
Standard Package
3,000
Other Names
SIR104DP-T1-RE3CT,SIR104DP-T1-RE3DKR,SIR104DP-RE3,SIR104DP-T1-RE3TR
HTSUS
8541.29.0095
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SIR104
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
5.4W (Ta), 100W (Tc)
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