SIR178DP-T1-RE3 VISHAY
Артикул
SIR178DP-T1-RE3
Бренд
VISHAY
Описание
MOSFET N-CH 20V 100A/430A PPAK, N-Channel 20 V 100A (Ta), 430A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Цена
312 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR178DP-T1-RE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
100A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs
0.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Vgs (Max)
+12V, -8V
FET Feature
-
Power Dissipation (Max)
6.3W (Ta), 104W (Tc)
Drain to Source Voltage (Vdss)
20 V
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
12430 pF @ 10 V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Standard Package
3,000
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
SIR178
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIR178DP-T1-RE3DKR,742-SIR178DP-T1-RE3CT,742-SIR178DP-T1-RE3TR
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
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