SIR401DP-T1-GE3 VISHAY
Артикул
SIR401DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 50A PPAK SO-8, P-Channel 20 V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8
Цена
176 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIR401DP-T1-GE3.jpg
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
9080 pF @ 10 V
FET Feature
-
Standard Package
3,000
Other Names
SIR401DP-T1-GE3-ND,SIR401DP-T1-GE3TR,SIR401DP-T1-GE3DKR,SIR401DP-T1-GE3CT
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SIR401
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
5W (Ta), 39W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут